White Paper: Provides platform-level error handling strategies and overview of error detection and notification capabilities. (v.001, May 2011)
White Paper: Overview of common error detection and notification capabilities in Intel® architecture-based systems used to implement platform-level error handling strategies. (v.001, May 2011)
Get realistic graphics with Intel® visual technology, integrated in the newest generation Intel® Core™ processors.
Built-in visuals enables realistic graphics and a stunning visual experience with the suite of technologies built right into the newest generation Intel® Core™ processors.
The visual features built into the processor deliver everything you need to enjoy a stunning and seamless experience when viewing content on your PC.
Intel® Identity Protection Technology (Intel® IPT) prevents unauthorized access to your important accounts by improving your level of security.
Verify Internet transactions using Intel® Identity Protection Technology with Public Key Infrastructure certificates, authenticating the user and server to each other to encrypt and digitally sign documents.
Video: real-time OS demo working on Intel® Atom™ processor based systems with Intel® Virtualization technology at Embedded World 2010.
John Cormican, Market Development Manager – ECG Intel, demonstrated real-time OS working along with general purpose OS on Intel® Atom™ single-core (N450) and Intel® Atom™ dual-core (D510) processor based systems with Intel® Virtualization technology (VT) at Embedded World 2010.Full View >
Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.
Intel demonstrates high-performance PMOS and NMOS transistors with high-K/metal-gate gate stacks with the right threshold voltages for both p- and nchannels on bulk Si
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.
Paper demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility reported for any Germanium device than new strained silicon.