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RF CMOS Technology Scaling in High-k/Metal Gate Era

RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.

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Strained Germanium QWFE Transistor as P-Channel Device Option for Low Power III-V CMOS Architecture

Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

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Advanced Metal Gate/High-K Dielectric Stacks for CMOS Transistors

Paper: n-type and p-type metal electrodes on high-K gate dielectrics enable same oxide thickness, desirable transistor threshold, and more.

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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate

Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

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Role of High-K Gate Dielectrics

Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.

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High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology

Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.

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Intel®’s 22nm Technology Moves Transistor Into the 3rd Dimension

Backgrounder: Intel's 22nm innovation ushers in new semiconductor technology and ensures the continuation of Moore's Law.

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All-in-One PC with Intel® Core™ i5 Processor

View the All-in-One PC with the Intel® Core™ i5 processor and a less-cluttered form factor for Intel level performance from anywhere in your home.

Intel’s Revolutionary 22nm Transistor Technology

Presentation: Intel introduces a fundamentally different technology for future microprocessor families: 3-D transistors manufactured at 22nm.

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